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May 2013
FDB86135
N-Channel Shielded Gate PowerTrench ? MOSFET
100V, 176A, 3.5m Ω
Features
? Shielded Gate MOSFET Technology
? Max R DS(on) = 3.5m Ω at V GS = 10V, I D = 75A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advanced PowerTrench ? process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Applications
? DC-DC primary bridge
? DC-DC Synchronous rectification
? Hot swap
D
D
G
D 2 -PAK
G
S
FDB Series
MOSFET Maximum Ratings T C = 25 C unless otherwise noted
S
o
Symbol
V DSS
Drain to Source Voltage
Parameter
Ratings
100
Units
V
- T C = 25 o C
- T A = 25 o C
V GSS
I D
E AS
P D
T J , T STG
Gate to Source Voltage
Drain Curren - Continuous (Silicon Limited)
- Continuous( Package Limited)
- Continuous
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
T C = 25 o C
T C = 25 o C
T C = 25 o C(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
±20
176
120
75
704
658
227
2.4
-55 to +175
V
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
Symbol
Parameter
Ratings
Units
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
0.66
62.5
o C/W
Package Marking and Ordering Information
Device Marking
FDB86135
Device
FDB86135
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
?2011 Fairchild Semiconductor Corporation
FDB86135 Rev. C1
1
www.fairchildsemi.com
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